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2003-10-14 page 1 SPD02N80C3 final data cool mos? power transistor v ds 800 v r ds ( on ) 2.7 ? i d 2 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated p-to252-3-1 type package ordering code SPD02N80C3 p-to252-3-1 q67040-s4635 marking 02n80c3 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 2 1.2 a pulsed drain current, t p limited by t j ma x i d p uls 6 avalanche energy, single pulse i d = 1 a, v dd = 50 v e as 90 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 2 a, v dd = 50 v e ar 0.05 avalanche current, repetitive t a r limited by t j ma x i a r 2 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 42 w operating and storage temperature t j , t st g -55... +150 c
2003-10-14 page 2 SPD02N80C3 final data maximum ratings parameter symbol value unit drain source voltage slope v ds = 640 v, i d = 2 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 3 k/w smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - - 75 50 soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 800 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =2a - 870 - gate threshold voltage v gs ( th ) i d =120 ? , v gs = v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =800v, v gs =0v, t j =25c, t j =150c - - 0.5 - 5 50 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =1.2a, t j =25c t j =150c - - 2.4 6.5 2.7 - ? gate input resistance r g f =1mhz, open drain - 0.7 -
2003-10-14 page 3 SPD02N80C3 final data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. transconductance g fs v ds 2* i d * r ds(on)max , i d =1.2a - 1.5 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 290 - pf output capacitance c oss - 130 - reverse transfer capacitance c rss - 6 - effective output capacitance, 3) energy related c o(er) v gs =0v, v ds =0v to 480v - 11.2 - pf effective output capacitance, 4) time related c o(tr) - 20.6 - turn-on delay time t d(on) v dd =400v, v gs =0/10v, i d =2a, r g =47 ? - 25 - ns rise time t r - 15 - turn-off delay time t d(off) - 65 75 fall time t f - 18 23 gate charge characteristics gate to source charge q gs v dd =640v, i d =2a - 1 - nc gate to drain charge q gd - 5 - gate charge total q g v dd =640v, i d =2a, v gs =0 to 10v - 9 12 gate plateau voltage v (plateau) v dd =640v, i d =2a - 6 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 4 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2003-10-14 page 4 SPD02N80C3 final data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 2 a inverse diode direct current, pulsed i sm - - 6 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =640v, i f = i s , d i f /d t =100a/s - 520 - ns reverse recovery charge q rr - 2 - c peak reverse recovery current i rrm - 6 - a peak rate of fall of reverse recovery current di rr / dt - 200 - a/s typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.067 k/w r th2 0.126 r th3 0.215 r th4 0.655 r th5 0.569 r th6 0.161 thermal capacitance c th1 0.00004221 ws/k c th2 0.0001651 c th3 0.0002432 c th4 0.0007613 c th5 0.002455 c th6 0.412 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2003-10-14 page 5 SPD02N80C3 final data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 5 10 15 20 25 30 35 40 w 50 SPD02N80C3 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc 4 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse
2003-10-14 page 6 SPD02N80C3 final data 5 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 a 5.5 i d 4v 5v 5.5v 6v 6.5v 20v 8v 7v 7 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 4 8 12 16 20 v 26 v ds 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 a 3 i d 4v 4.5v 5v 5.5v 20v 6.5v 6v 8 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 0.5 1 1.5 2 a 3 i d 5 7 9 11 ? 15 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 20v
2003-10-14 page 7 SPD02N80C3 final data 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 1.2 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 1 2 3 4 5 6 7 8 9 10 11 12 ? 15 SPD02N80C3 r ds(on) typ 98% 10 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 a 5.5 i d 150c 25c 11 typ. gate charge v gs = f ( q gate ) parameter: i d = 2 a pulsed 0 2 4 6 8 10 12 nc 16 q gate 0 2 4 6 8 10 12 v 16 SPD02N80C3 v gs 0.2 v ds max 0.8 v ds max 12 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -2 10 -1 10 0 10 1 10 a SPD02N80C3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2003-10-14 page 8 SPD02N80C3 final data 13 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 5 s t ar 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 a 2 i ar t j(start) =25c t j (start) =125c 14 avalanche energy e as = f ( t j ) par.: i d = 1 a, v dd = 50 v 25 45 65 85 105 125 c 155 t j 0 10 20 30 40 50 60 70 mj 90 e as 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 720 740 760 780 800 820 840 860 880 900 920 940 v 980 SPD02N80C3 v (br)dss 16 avalanche power losses p ar = f ( f ) parameter: e ar =0.05mj 10 4 10 5 10 6 hz f 0 10 20 30 w 50 p ar
2003-10-14 page 9 SPD02N80C3 final data 17 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 500 600 v 800 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 18 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 500 600 700 v 900 v ds 0 0.5 1 1.5 2 j 3 e oss definition of diodes switching characteristics
2003-10-14 page 10 SPD02N80C3 final data p-to-252-3-1 (d-pak)
2003-10-14 page 11 SPD02N80C3 final data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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